Campo DC | Valor | Idioma |
dc.contributor.author | Vasconcellos, Aurea R. | - |
dc.contributor.author | Luzzi, Roberto | - |
dc.contributor.author | Esperidião, Antônio Sérgio Cavalcante | - |
dc.creator | Vasconcellos, Aurea R. | - |
dc.creator | Luzzi, Roberto | - |
dc.creator | Esperidião, Antônio Sérgio Cavalcante | - |
dc.date.accessioned | 2013-11-16T13:01:41Z | - |
dc.date.available | 2013-11-16T13:01:41Z | - |
dc.date.issued | 1995 | - |
dc.identifier.issn | 1098-0121 | - |
dc.identifier.uri | http://repositorio.ufba.br/ri/handle/ri/13673 | - |
dc.description | p. 5021-5029 | pt_BR |
dc.description.abstract | We analyze the hydrodynamic modes associated with carriers in a photoinjected plasma in a directgap
polar semiconductor. In this paper we concentrate our attention on the carrier material motion.
Resorting to a mechanostatistical approach to irreversible thermodynamics, the coupled equations of
evolution for the charge density of electrons and holes are derived. They have the form of hyperbolic
equations which imply collective damped wave propagation. The kinetic coe%cients on which they depend
are determined at this mechanostatistical microscopic level. The corresponding hydrodynamic
modes are characterized: they consist of, besides the single quasiparticle (electrons and holes) excitations,
two collective modes, namely, the acoustical and optical plasma waves. Their dispersion relations and
lifetimes are obtained. These hydrodynamic modes are evidenced and further characterized through the
calculation and analysis of the spectrum of Raman scattering of radiation by the carriers. The motion of
the charge density is analyzed and we show how the damped wave regime goes over to the Fick-like
diffusive regime in the limit of very large wavelengths and very low frequencies. | pt_BR |
dc.language.iso | en | pt_BR |
dc.publisher | Physical Review B | pt_BR |
dc.source | http://prb-aps-org.ez10.periodicos.capes.gov.br/pdf/PRB/v52/i7/p5021_1 | pt_BR |
dc.title | Damped plasma waves in photoexcited plasma in semiconductors | pt_BR |
dc.title.alternative | Physical Review B | pt_BR |
dc.type | Artigo de Periódico | pt_BR |
dc.description.localpub | Salvador | pt_BR |
dc.identifier.number | v. 52, n. 7 | pt_BR |
Aparece nas coleções: | Artigo Publicado em Periódico (FIS)
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