| Campo DC | Valor | Idioma |
|---|
| dc.contributor.author | Almeida, J. Souza de | - |
| dc.contributor.author | Silva, A. J. da | - |
| dc.contributor.author | Norman, P. | - |
| dc.contributor.author | Persson, C. | - |
| dc.contributor.author | Ahuja, Rajeev | - |
| dc.contributor.author | Silva, A. Ferreira da | - |
| dc.creator | Almeida, J. Souza de | - |
| dc.creator | Silva, A. J. da | - |
| dc.creator | Norman, P. | - |
| dc.creator | Persson, C. | - |
| dc.creator | Ahuja, Rajeev | - |
| dc.creator | Silva, A. Ferreira da | - |
| dc.date.accessioned | 2014-11-11T17:57:54Z | - |
| dc.date.available | 2014-11-11T17:57:54Z | - |
| dc.date.issued | 2002 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.uri | http://repositorio.ufba.br/ri/handle/ri/16549 | - |
| dc.description | p. 3158-3160 | pt_BR |
| dc.description.abstract | The effect of the transition energy of three-donor clusters on far infrared absorption in n-type semiconductor materials has been investigated by a multiconfigurational self-consistent-field model calculation and applied to GaAs and GaN systems. We show that it is crucial to consider the many-particle correlation effects within three-donor clusters. With electron correlation taken into account, the present results support the interpretation of a very recent unidentified peak energy observed in absorption measurement of GaN as due to electronic transitions in these clusters. We also corroborate the suggestion that the X line in GaAs arises from such transitions. | pt_BR |
| dc.language.iso | en | pt_BR |
| dc.rights | Acesso Aberto | pt_BR |
| dc.source | http://dx.doi.org/10.1063/1.1515121 | pt_BR |
| dc.title | Optical properties of donor-triad cluster in GaAs and GaN | pt_BR |
| dc.title.alternative | Applied Physics Letters | pt_BR |
| dc.type | Artigo de Periódico | pt_BR |
| dc.identifier.number | v. 81, n. 17 | pt_BR |
| dc.publisher.country | Brasil | pt_BR |
| Aparece nas coleções: | Artigo Publicado em Periódico (FIS)
|
