Absorvedores reconfiguráveis baseados em materiais com mudança de fase

Abstract

Chalcogenide phase change materials are potentially advantageous elements and are known for their high data retention capacity. When integrated into electromagnetic absorbing structures, they are capable of controlling the effects of absorption over a wide range of wavelengths due to the optical contrast caused by the modulation of their refractive indices. In this dissertation, plasmonic absorber structures were analyzed, using a layer of chalcogenide (GeTe) phase change material in the infrared spectrum range (1000-2200 nm). Using the Lorentz-Lorenz relationship, it was possible to control the resonance peaks of the geometry through functions in the two cases studied. The physical mechanisms of the absorbers when interacting with incident light and the phenomena caused were also analyzed. The absorbers were analyzed at normal and oblique incidence in Transverse Electrical (TE) and Transverse Magnetic (TM) polarization modes and the results achieved were greater than 93%. These structures are potential applications for several technologies employed in reconfigurable nanophotonic devices.