Campo DC | Valor | Idioma |
dc.contributor.author | Silva, A. Ferreira da | - |
dc.contributor.author | Silva, T. Souza da | - |
dc.contributor.author | Nakamura, Ossamu | - |
dc.contributor.author | D'Aguiar Neto, Manoel Marcos Freire | - |
dc.contributor.author | Pepe, Iuri Muniz | - |
dc.contributor.author | Roman, L. S. | - |
dc.contributor.author | Veje, E. | - |
dc.creator | Silva, A. Ferreira da | - |
dc.creator | Silva, T. Souza da | - |
dc.creator | Nakamura, Ossamu | - |
dc.creator | D'Aguiar Neto, Manoel Marcos Freire | - |
dc.creator | Pepe, Iuri Muniz | - |
dc.creator | Roman, L. S. | - |
dc.creator | Veje, E. | - |
dc.date.accessioned | 2011-12-20T10:58:58Z | - |
dc.date.available | 2011-12-20T10:58:58Z | - |
dc.date.issued | 2001-01 | - |
dc.identifier.issn | 1516-1439 | - |
dc.identifier.uri | http://www.repositorio.ufba.br/ri/handle/ri/4918 | - |
dc.description | p. 23-26. | pt_BR |
dc.description.abstract | Thermal diffusivity and optical absorption have been investigated for porous silicon, at room temperature, using photoacoustic spectroscopy. The experimental results obtained conform well with the existing studies recently published. The value obtained for thermal diffusivity is 0.045 ± 0.002 cm2/s.The absorption onsets show energy structures, differing from the ordinary semiconductor of bulk type. PACS 51.20.Td; 74.25.Fy; 73.20.Dy; 78.20.Wc; 81.40.Tv | pt_BR |
dc.language.iso | en | pt_BR |
dc.source | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392001000100006&lng=en&nrm=iso | pt_BR |
dc.subject | Thermal properties | pt_BR |
dc.subject | Optical properties | pt_BR |
dc.subject | Photoacoustic spectroscopy | pt_BR |
dc.subject | Porous silicon | pt_BR |
dc.title | Thermal and Optical Properties of Porous Silicon | pt_BR |
dc.title.alternative | Materials Research | pt_BR |
dc.type | Artigo de Periódico | pt_BR |
dc.description.localpub | São Carlos | pt_BR |
dc.identifier.number | v. 4, n. 1. | pt_BR |
Aparece nas coleções: | Artigo Publicado em Periódico (FIS)
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