| Campo DC | Valor | Idioma |
|---|
| dc.contributor.author | Astrath, N. G. C. | - |
| dc.contributor.author | Bento, Antonio Carlos | - |
| dc.contributor.author | Baesso, Mauro Luciano | - |
| dc.contributor.author | Silva, A. Ferreira da | - |
| dc.contributor.author | Persson, C. | - |
| dc.creator | Astrath, N. G. C. | - |
| dc.creator | Bento, Antonio Carlos | - |
| dc.creator | Baesso, Mauro Luciano | - |
| dc.creator | Silva, A. Ferreira da | - |
| dc.creator | Persson, C. | - |
| dc.date.accessioned | 2012-07-03T15:46:19Z | - |
| dc.date.available | 2012-07-03T15:46:19Z | - |
| dc.date.issued | 2006 | - |
| dc.identifier.issn | 0040-6090 | - |
| dc.identifier.uri | http://www.repositorio.ufba.br/ri/handle/ri/6300 | - |
| dc.description | RESTRITO | pt_BR |
| dc.description.abstract | The optical transitions in a range of 1.5–5.2 eV of n-type 4H-SiC have been investigated experimentally by photoacoustic spectroscopy and theoretically by a full-potential linearized augmented plane wave method. From the absorption spectrum, we found the indirect optical bandgap at 3.2 eV and the direct transitions around 4.5 eV in very good agreement with what has been predicted by theoretical calculations. | pt_BR |
| dc.language.iso | en | pt_BR |
| dc.publisher | Thin Solid Films | pt_BR |
| dc.source | http://dx.doi.org/10.1016/j.tsf.2006.08.009 | pt_BR |
| dc.subject | Silicon carbide | pt_BR |
| dc.subject | Photoacoustic spectroscopy | pt_BR |
| dc.title | Photoacoustic spectroscopy to determine the optical properties of thin film 4H-SiC | pt_BR |
| dc.title.alternative | Thin Solid Films | pt_BR |
| dc.type | Artigo de Periódico | pt_BR |
| dc.identifier.number | v.515, n.4 | pt_BR |
| Aparece nas coleções: | Artigo Publicado em Periódico (FIS)
|
