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Use este identificador para citar ou linkar para este item: https://repositorio.ufba.br/handle/ri/7873
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dc.contributor.authorEsperidião, Antônio Sérgio Cavalcante-
dc.contributor.authorVasconcellos, Aurea R.-
dc.contributor.authorLuzzi, Roberto-
dc.creatorEsperidião, Antônio Sérgio Cavalcante-
dc.creatorVasconcellos, Aurea R.-
dc.creatorLuzzi, Roberto-
dc.date.accessioned2013-01-15T19:10:40Z-
dc.date.available2013-01-15T19:10:40Z-
dc.date.issued1989-
dc.identifier.issn0038-1101-
dc.identifier.urihttp://www.repositorio.ufba.br/ri/handle/ri/7873-
dc.descriptionTexto completo. Acesso restrito. p. 1 - 3pt_BR
dc.description.abstractResorting to the Nonequilibrium Statistical Operator Method (NSOM) we calculate the Raman spectrum of the double (electrons and holes) photoinjected plasma in direct-gap polar semiconductors. It allows us to identify four types of elementary excitations in the photoexcited carrier system. Besides the expected Raman bands corresponding to single quasi-particle excitations and a higher frequency plasma wave (labelled optical), there appear two low-frequency bands. They show a linear energy dispersion relation and are labelled acoustic plasma oscillations. While the optical plasma branch is ascribed to the out of phase collective movement of both types of carriers interacting through the bare Coulomb interaction, the acoustic branches are ascribed to the in-phase oscillation of each type of carriers interacting through the screened part of Coulomb interaction.pt_BR
dc.language.isoenpt_BR
dc.publisherSolid-State Electronicspt_BR
dc.sourcehttp://dx.doi.org/10.1016/0038-1101(89)90218-9pt_BR
dc.titlePhotoinjected carrier's acoustic plasma oscillationspt_BR
dc.title.alternativeSolid-State Electronicspt_BR
dc.typeArtigo de Periódicopt_BR
dc.description.localpubSalvadorpt_BR
dc.identifier.numberv. 32, n. 12pt_BR
Aparece nas coleções:Artigo Publicado em Periódico (FIS)

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