Derivation of the unified charge control model and parameter extraction procedure

Abstract

This paper presents a physical derivation of the unified charge control model (UCCM) [Park C-K, Lee C-Y, Lee K, Moon B-J, Byun YH, Shur M. IEEE Trans Electron Dev 1991;ED-38:399; Lee K, Shur M, Fjeldly TA, Ytterdal T. Semiconductor device modeling for VLSI. Englewoods Cliffs: Prentice Hall, 1993.], which describes the relationship between inversion charge density and the applied voltages in the MOS transistor for any operating region. Using the UCCM and the MOSFET charge model presented in Cunha et al. [Cunha AIA, Schneider MC, Galup-Montoro C. Solid-St Electron 1995;38:1945.], we develop a MOSFET model formulated in terms of the drain current in saturation. Based on this model, a methodology for the extraction of the UCCM parameters is proposed.