An explicit physical model for the long-channel MOS transistor including small-signal parameters

Abstract

This paper presents a long-channel MOSFET model wherein the drain current, total charges and small-signal parameters for quasi-static operation are very simple functions of the inversion charge densities at the channel boundaries. The inversion charge densities, in turn, are formulated as explicit continuous functions of the terminal voltages, with continuous first order derivatives, resulting in an explicit MOSFET model valid in the whole inversion region. Physical properties, such as the symmetry of the transistor with respect to source and drain are carefully observed in order to achieve a proper prediction of the device behavior. The proposed model contains only the classical parameters of the MOSFET theory.