Campo DC | Valor | Idioma |
dc.contributor.author | Sandoval, M A Toloza | - |
dc.contributor.author | Silva, E A de Andrada e | - |
dc.contributor.author | Silva, A Ferreira da | - |
dc.contributor.author | Rocca, G C La | - |
dc.creator | Sandoval, M A Toloza | - |
dc.creator | Silva, E A de Andrada e | - |
dc.creator | Silva, A Ferreira da | - |
dc.creator | Rocca, G C La | - |
dc.date.accessioned | 2017-11-01T13:25:50Z | - |
dc.date.available | 2017-11-01T13:25:50Z | - |
dc.date.issued | 2016-09-27 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | http://repositorio.ufba.br/ri/handle/ri/24500 | - |
dc.description.abstract | The electron effective g factor tensor in asymmetric III–V semiconductor quantum wells
(AQWs) and its tuning with the structure parameters and composition are investigated with
envelope-function theory and the 8´8 k · p Kane model. The spin-dependent terms in the
electron effective Hamiltonian in the presence of an external magnetic field are treated as a
perturbation and the g factors * ^ g and * g , for the magnetic field in the QW plane and along the
growth direction, are obtained analytically as a function of the well width L. The effects of the
structure inversion asymmetry (SIA) on the electron g factor are analyzed. For the g-factor main
anisotropy D = *- * g g^ g in AQWs, a sign change is predicted in the narrow well limit due to
SIA, which can explain recent measurements and be useful in spintronic applications. Specific
results for narrow-gap AlSb InAs GaSb and AlxGa1-xAs GaAs AlyGa1-yAs AQWs are
presented and discussed with the available experimental data; in particular InAs QWs are shown
to not only present much larger g factors but also a larger g-factor anisotropy, and with the
opposite sign with respect to GaAs QWs. | pt_BR |
dc.language.iso | en | pt_BR |
dc.publisher | SEMICONDUCTOR SCIENCE AND TECHNOLOGY (PRINT) | pt_BR |
dc.rights | Acesso Aberto | pt_BR |
dc.source | 10.1088/0268-1242/31/11/115008 | pt_BR |
dc.subject | Semiconductor quantum wells | pt_BR |
dc.subject | Spin–orbit interaction | pt_BR |
dc.subject | Electron g factor | pt_BR |
dc.title | Electron g factor anisotropy in asymmetric III–V semiconductor quantum wells | pt_BR |
dc.type | Artigo de Periódico | pt_BR |
dc.identifier.number | v.31 | pt_BR |
dc.publisher.country | Brasil | pt_BR |
Aparece nas coleções: | Artigo Publicado em Periódico (Renorbio)
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