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dc.contributor.authorSandoval, M A Toloza-
dc.contributor.authorSilva, E A de Andrada e-
dc.contributor.authorSilva, A Ferreira da-
dc.contributor.authorRocca, G C La-
dc.creatorSandoval, M A Toloza-
dc.creatorSilva, E A de Andrada e-
dc.creatorSilva, A Ferreira da-
dc.creatorRocca, G C La-
dc.date.accessioned2017-11-01T13:25:50Z-
dc.date.available2017-11-01T13:25:50Z-
dc.date.issued2016-09-27-
dc.identifier.issn0268-1242-
dc.identifier.urihttp://repositorio.ufba.br/ri/handle/ri/24500-
dc.description.abstractThe electron effective g factor tensor in asymmetric III–V semiconductor quantum wells (AQWs) and its tuning with the structure parameters and composition are investigated with envelope-function theory and the 8´8 k · p Kane model. The spin-dependent terms in the electron effective Hamiltonian in the presence of an external magnetic field are treated as a perturbation and the g factors * ^ g and * g , for the magnetic field in the QW plane and along the growth direction, are obtained analytically as a function of the well width L. The effects of the structure inversion asymmetry (SIA) on the electron g factor are analyzed. For the g-factor main anisotropy D = *- * g g^ g in AQWs, a sign change is predicted in the narrow well limit due to SIA, which can explain recent measurements and be useful in spintronic applications. Specific results for narrow-gap AlSb InAs GaSb and AlxGa1-xAs GaAs AlyGa1-yAs AQWs are presented and discussed with the available experimental data; in particular InAs QWs are shown to not only present much larger g factors but also a larger g-factor anisotropy, and with the opposite sign with respect to GaAs QWs.pt_BR
dc.language.isoenpt_BR
dc.publisherSEMICONDUCTOR SCIENCE AND TECHNOLOGY (PRINT)pt_BR
dc.rightsAcesso Abertopt_BR
dc.source10.1088/0268-1242/31/11/115008pt_BR
dc.subjectSemiconductor quantum wellspt_BR
dc.subjectSpin–orbit interactionpt_BR
dc.subjectElectron g factorpt_BR
dc.titleElectron g factor anisotropy in asymmetric III–V semiconductor quantum wellspt_BR
dc.typeArtigo de Periódicopt_BR
dc.identifier.numberv.31pt_BR
dc.publisher.countryBrasilpt_BR
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