| Campo DC | Valor | Idioma |
|---|
| dc.contributor.author | Silva, A Ferreira da | - |
| dc.contributor.author | Canuto, Sylvio | - |
| dc.creator | Silva, A Ferreira da | - |
| dc.creator | Canuto, Sylvio | - |
| dc.date.accessioned | 2013-01-14T18:23:04Z | - |
| dc.date.available | 2013-01-14T18:23:04Z | - |
| dc.date.issued | 1990 | - |
| dc.identifier.issn | 0038-1098 | - |
| dc.identifier.uri | http://www.repositorio.ufba.br/ri/handle/ri/7851 | - |
| dc.description | p. 1 - 3 | pt_BR |
| dc.description.abstract | The density of states in n-doped Si in the intermediate impurity concentration
range has been calculated for an interacting three-donor
molecule. The results support the interpretation that the observed far
infrared absorption at the energies below 30 meV is due to the electronic
transition H? -+ H: from their impurity ground states. | pt_BR |
| dc.language.iso | en | pt_BR |
| dc.publisher | Solid State Communications | pt_BR |
| dc.source | http://dx.doi.org/10.1016/0038-1098(90)90414-7 | pt_BR |
| dc.title | Effect of three-donor cluster on infrared absorption of semiconductor systems | pt_BR |
| dc.title.alternative | Solid State Communications | pt_BR |
| dc.type | Artigo de Periódico | pt_BR |
| dc.description.localpub | São José dos Campos | pt_BR |
| dc.identifier.number | v. 75, n. 11 | pt_BR |
| Aparece nas coleções: | Artigo Publicado em Periódico (FIS)
|
